IPD80R1K4CEATMA1

Manufacturer Part	IPD80R1K4CEATMA1
Manufacturer	Infineon Technologies
Description	MOSFET N-CH 800V 3.9A TO252-3
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:	3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:	23 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	570 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	63W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;