G3S12010B

Manufacturer Part	G3S12010B
Manufacturer	Global Power Technology-GPT
Description	SIC SCHOTTKY DIODE 1200V 10A 3-P
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	1200 V
Current - Average Rectified (Io) (per Diode):	39A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 5 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	50 µA @ 1200 V
Operating Temperature - Junction:	-55°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AB

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;